US Patent Issued to UIF (University Industry Foundation), Yonsei University on Oct. 20 for "Memory device based on phase change memory for deep neural network and method for storing weight thereof" (South Korean Inventor)

Posted On: 2026-10-21

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,683, issued on Oct. 20, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea). "Memory device based ... Read More

US Patent Issued to Revol-Ver on Oct. 20 for "Configuration bit circuit for programmable logic device including phase change memory and operation method thereof" (South Korean Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,684, issued on Oct. 20, was assigned to Revol-Ver Inc. (Yongin-si, South Korea). "Configuration bit circuit for programmable logic device i... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 20 for "Memory device with content addressable memory units" (Taiwanese Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,685, issued on Oct. 20, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device with content addressa... Read More

US Patent Issued to Zeno Semiconductor on Oct. 20 for "Content addressable memory device having electrically floating body transistor" (California Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,686, issued on Oct. 20, was assigned to Zeno Semiconductor Inc. (Cupertino, Calif.). "Content addressable memory device having electrically... Read More

US Patent Issued to Kioxia on Oct. 20 for "Semiconductor memory device" (Japanese Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,687, issued on Oct. 20, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device" was invented by Xu Li (Yokohama Kanagawa, Japan... Read More

US Patent Issued to SK hynix on Oct. 20 for "Memory device performing program operation and method of operating the same" (South Korean Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,688, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device performing program operation and method of o... Read More

US Patent Issued to Micron Technology on Oct. 20 for "Dynamic wordline start voltage computation" (Indian Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,689, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho). "Dynamic wordline start voltage computation" was invented by... Read More

US Patent Issued to Yangtze Memory Technologies on Oct. 20 for "Managing program operations in memory devices" (Chinese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,690, issued on Oct. 20, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing program operations in memory devices... Read More

US Patent Issued to Winbond Electronics on Oct. 20 for "Method of erasing memory cells of flash memory device and an flash memory device using the same" (California Inventor)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,691, issued on Oct. 20, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Method of erasing memory cells of flash memory ... Read More

US Patent Issued to MACRONIX International on Oct. 20 for "Extraction method of physically unclonable function and memory device" (Taiwanese Inventors)

Posted On: 2026-10-21

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ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,692, issued on Oct. 20, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Extraction method of physically unclonable func... Read More

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US Patent Issued to UIF (University Industry Foundation), Yonsei University on Oct. 20 for "Memory device based on phase change memory for deep neural network and method for storing weight thereof" (South Korean Inventor)

US Patent Issued to Revol-Ver on Oct. 20 for "Configuration bit circuit for programmable logic device including phase change memory and operation method thereof" (South Korean Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 20 for "Memory device with content addressable memory units" (Taiwanese Inventor)

US Patent Issued to Zeno Semiconductor on Oct. 20 for "Content addressable memory device having electrically floating body transistor" (California Inventors)

US Patent Issued to Kioxia on Oct. 20 for "Semiconductor memory device" (Japanese Inventor)

US Patent Issued to SK hynix on Oct. 20 for "Memory device performing program operation and method of operating the same" (South Korean Inventors)

US Patent Issued to Micron Technology on Oct. 20 for "Dynamic wordline start voltage computation" (Indian Inventor)

US Patent Issued to Yangtze Memory Technologies on Oct. 20 for "Managing program operations in memory devices" (Chinese Inventors)

US Patent Issued to Winbond Electronics on Oct. 20 for "Method of erasing memory cells of flash memory device and an flash memory device using the same" (California Inventor)

US Patent Issued to MACRONIX International on Oct. 20 for "Extraction method of physically unclonable function and memory device" (Taiwanese Inventors)